 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designed for general-purpose amplifier and low-speed switching applications. Features http://onsemi.com * High DC Current Gain - hFE = 2000 (Typ) @ IC * * * = 2.0 Adc Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage - Multiplication Choice of Packages - MJE700 and MJE800 Series Pb-Free Packages are Available* 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT MAXIMUM RATINGS III I I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIII III III I I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III III IIIIIIIIIIIIIIIIIII II I I I III IIIIIIIIIIIIIIIIIII III III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIII III I I II I III I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III III I I I IIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII Collector-Emitter Voltage MJE700, MJE800 MJE702, MJE703, MJE802, MJE803 Collector-Base Voltage MJE700, MJE800 MJE702, MJE703, MJE802, MJE803 Emitter-Base Voltage Collector Current Base Current VCEO Vdc 60 80 60 80 VCB Vdc VEB IC IB 5.0 4.0 0.1 Vdc Adc Adc Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 40 0.32 W mW/_C _C TJ, Tstg -55 to +150 Rating Symbol Value Unit TO-225 CASE 77 STYLE 1 3 21 MARKING DIAGRAM YWW JEx0yG THERMAL CHARACTERISTICS Characteristic Symbol qJC Max Unit Thermal Resistance, Junction-to-Case 6.25 _C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Y = Year WW = Work Week JEx0y = Device Code x = 7 or 8 y = 0, 2, or 3 G = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 1 February, 2006 - Rev. 8 Publication Order Number: MJE700/D MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) PD, POWER DISSIPATION (WATTS) I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I III IIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Breakdown Voltage (Note 1) MJE700, MJE800 (IC = 50 mAdc, IB = 0) MJE702, MJE703, MJE802, MJE803 Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) MJE700, MJE800 MJE702, MJE703, MJE802, MJE803 V(BR)CEO ICEO 60 80 - - - - - - - Vdc mAdc 100 100 100 500 2.0 Collector Cutoff Current (VCB = Rated BVCEO, IE = 0) (VCB = Rated BVCEO, IE = 0, TC = 100_C) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ICBO mAdc IEBO mAdc ON CHARACTERISTICS DC Current Gain (Note 1) (IC = 1.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) hFE - MJE700, MJE702, MJE800, MJE802 MJE703, MJE803 All devices 750 750 100 - - - - - - - - - Collector-Emitter Saturation Voltage (Note 1) (IC = 1.5 Adc, IB = 30 mAdc) MJE700, MJE702, MJE800, MJE802 (IC = 2.0 Adc, IB = 40 mAdc) MJE703, MJE803 (IC = 4.0 Adc, IB = 40 mAdc) All devices Base-Emitter On Voltage (Note 1) (IC = 1.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) MJE700, MJE702, MJE800, MJE802 MJE703, MJE803 All devices VCE(sat) Vdc 2.5 2.8 3.0 2.5 2.5 3.0 VBE(on) Vdc DYNAMIC CHARACTERISTICS Small-Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) hfe 1.0 - - 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 50 40 TO-220AB 30 TO-126 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 1. Power Derating http://onsemi.com 2 MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) 4.0 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA TUT V2 APPROX +8.0 V 0 V1 APPROX -12 V tr, tf 10 ns DUTY CYCLE = 1.0% 51 RB VCC -30 V RC ts 2.0 SCOPE VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C t, TIME ( s) tf 1.0 0.8 0.6 0.4 PNP NPN 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 tr D1 6.0 k 150 + 4.0 V 25 ms For td and tr, D1 id disconnected and V2 = 0, RB and RC are varied to obtain desired test currents. For NPN test circuit, reverse diode, polarities and input pulses. td @ VBE(off) = 0 0.2 0.04 0.06 Figure 2. Switching Times Test Circuit 1.0 0.7 0.5 0.3 0.2 0.1 0.05 0.01 SINGLE PULSE Figure 3. Switching Times r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 qJC(t) = r(t) qJC qJC = 3.12C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) P(pk) 0.1 0.07 0.05 0.03 t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response (MJE700, 800 Series) ACTIVE-REGION SAFE-OPERATING AREA IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 5.0 5.0 ms 1.0 ms 100 ms 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 5.0 5.0 ms 1.0 ms 100 ms dc TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED MJE702, 703 MJE700 7.0 10 20 30 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 dc TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED MJE802, 803 MJE800 7.0 10 20 30 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 5. MJE700 Series Figure 6. MJE800 Series There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 are based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. http://onsemi.com 3 MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) PNP MJE700 Series 6.0 k 4.0 k hFE , DC CURRENT GAIN 3.0 k 2.0 k -55 C 1.0 k 800 600 400 300 0.04 0.06 TJ = 125C 25C VCE = 3.0 V 4.0 k hFE , DC CURRENT GAIN 3.0 k 2.0 k 25C -55 C 6.0 k TJ = 125C VCE = 3.0 V NPN MJE800 Series 1.0 k 800 600 400 300 0.04 0.06 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 Figure 7. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.4 TJ = 25C 3.0 2.6 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IC = 0.5 A 1.0 A 2.0 A 4.0 A VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.4 3.0 2.6 2.2 1.8 1.4 1.0 0.6 0.1 IC = 0.5 A 1.0 A 2.0 A 4.0 A TJ = 25C 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 8. Collector Saturation Region 2.2 TJ = 25C 1.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 250 V, VOLTAGE (VOLTS) 2.2 TJ = 25C 1.8 VBE(sat) @ IC/IB = 250 1.4 VBE @ VCE = 3.0 V 1.4 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.6 1.0 VCE(sat) @ IC/IB = 250 0.6 0.2 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.2 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 9. "On" Voltages http://onsemi.com 4 MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) ORDERING INFORMATION Device MJE700 MJE700G MJE702 MJE702G MJE703 MJE703G MJE800 MJE800G MJE802 MJE802G MJE803 MJE803G Package TO-225 TO-225 (Pb-Free) TO-225 TO-225 (Pb-Free) TO-225 TO-225 (Pb-Free) 50 Units / Bulk TO-225 TO-225 (Pb-Free) TO-225 TO-225 (Pb-Free) TO-225 TO-225 (Pb-Free) Shipping http://onsemi.com 5 MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE Z -B- U Q F M C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- -A- 123 H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M M A M B M B M DIM A B C D F G H J K M Q R S U V STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 MJE700/D |
Price & Availability of MJE70006
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |